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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1094 DESCRIPTION With TO-220Fa package Complement to type 2SD1585 APPLICATIONS Ideal for power supplies or variety or in audio and other equipment PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER CONDITIONS Open emitter Collector-base voltage Collector -emitter voltage IN Emitter-base voltage Collector current HAN C SEM GE Open base OND IC TOR UC VALUE -60 -60 -7 -3 -5 -0.6 UNIT V V V A A A Open collector Collector current-peak Base current Ta=25ae 2.0 W 15 150 -55~150 ae ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA; IB=0 IC=-2A ;IB=-0.2A IC=-2A ;IB=-0.2A VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-50mA ; VCE=-5V IC=-0.5A ; VCE=-5V IC=-0.1A; VCE=-5V f=1MHz ; VCB=-10V 20 40 MIN -60 2SB1094 SYMBOL VCEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -1.5 -2.0 -10 -10 |I |I V V A A 200 20 MHz pF Collector output capacitance L K 100-200 hFE-2 Classifications M 40-80 HAN INC 60-120 SEM GE OND IC TOR UC 70 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1094 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 |
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